Modelithics Qorvo GaN Library

Qorvo and Modelithics extend their collaboration to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices.

The Modelithics® Qorvo GaN Library has been developed using "best-in-class" measurement and modeling techniques. Modelithics is well-known for providing highly accurate measurement-based, advanced feature simulation models, offering powerful substrate and part-value scaling capability, instrumental in high frequency design. Modelithics' model libraries integrate seamlessly with the latest electronic design automation (EDA) simulation tools, and are thoroughly documented, with a model information data sheet for each model.

Qorvo GaN Transistor Model Library

The Qorvo GaN transistor model library contains a powerful collection of high-accuracy nonlinear simulation models for die- and package-format GaN transistors from Qorvo. Each model has advanced design features including variable bias, temperature scaling, self-heating effects, intrinsic I-V sensing, and bondwire settings when applicable. The Modelithics Qorvo GaN library also contains example projects that demonstrate the model features and facilitate the process of test bench setup for common linear and nonlinear design simulations.

Modelithics has used select models to generate power amplifier reference designs. They have then fabricated, tested and documented these designs to illustrate the model accuracy and usefulness for design application, as well as the individual GaN device capabilities at the PA circuit level. One reference design for a 1.8-2.2 GHz PA design illustrates how the use of intrinsic port access and multiharmonic tuning features of the GaN models, and the use of Modelithics Microwave Global Models™ for the passives, were keys to first-pass design success. (See the related cover feature article in the March 2016 issue of High Frequency Electronics magazine).

Another article discussing the device and circuit level validations of the Modelithics Qorvo GaN Library, Device and PA Circuit Level Validations of a High Power GaN Model Library, can be found in the August 2016 issue of Microwave Journal.