T1G2028536-FL
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
Qorvo's T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Key Features
- Frequency: DC to 2 GHz
- Output power (P3dB): 260 W at 1.2 GHz
- Linear gain: 18 dB at 1.2 GHz
- Operating voltage: 36 V
- Low thermal resistance package
Typical Applications
- Avionics
- Civilian Radar
- GPS
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteBill of Materials
Bill of MaterialsModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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